Search Any Laser Products in the Right Search Box

BeamQ

Name: S1227-1010BR BQ Japan Hamamatsu silicon photodiode HAMAMATSU
SKU: 4889
Price: 99.00 USD
Availability: InStock

All Lasers Life & Industrial. Contact beamqlaser@gmail.com

View cart “S1337-1010BQSi photodiode” has been added to your cart.

S1227-1010BR BQ Japan Hamamatsu silicon photodiode HAMAMATSU

$99.00

Category: SI PhotoDiode

Description

Description

S1227-1010BR BQ Japan Hamamatsu silicon photodiode HAMAMATSU

Features
– Resin potting window type
– Suppressed IR sensitivity
– Low dark current

Specifications

Photosensitive area	10 × 10 mm
Number of elements	1
Package	Ceramic
Cooling	Non-cooled
Reverse voltage (max.)	5 V
Spectral response range	340 to 1000 nm
Peak sensitivity wavelength (typ.)	720 nm
Photosensitivity (typ.)	0.43 A/W
Dark current (max.)	50 pA
Rise time (typ.)	7 μs
Terminal capacitance (typ.)	3000 pF
Noise equivalent power (typ.)	6.7×10^-15 W/Hz^1/2
Measurement condition	Typ. Ta=25 ℃, Photosensitivity: λ=720 nm, Dark current: V_R=10 mV, Terminal capacitance: V_R=0 V, f=10 kHz, unless otherwise noted

Configuration:

• Window Material: Resin Plotting
• Package: 15mm x 16.5mm
• Photosensitive Area Size: 10mm x 10mm
• Effective Photosensitive Area: 100mm2
• Spectral Response Range: 340 to 1000 nm

Hamamatsu S1227-1010BR-6K Photodiode

KSPDA0101