S1227-1010BR BQ Japan Hamamatsu silicon photodiode HAMAMATSU

$99.00

Category:

Description

S1227-1010BR BQ Japan Hamamatsu silicon photodiode HAMAMATSU

Features
– Resin potting window type
– Suppressed IR sensitivity
– Low dark current

 

Specifications

Photosensitive area 10 × 10 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 340 to 1000 nm
Peak sensitivity wavelength (typ.) 720 nm
Photosensitivity (typ.) 0.43 A/W
Dark current (max.) 50 pA
Rise time (typ.) 7 μs
Terminal capacitance (typ.) 3000 pF
Noise equivalent power (typ.) 6.7×10-15 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted

Configuration:

• Window Material: Resin Plotting
• Package: 15mm x 16.5mm
• Photosensitive Area Size: 10mm x 10mm
• Effective Photosensitive Area: 100mm2
• Spectral Response Range: 340 to 1000 nm

Hamamatsu S1227-1010BR-6K Photodiode

KSPDA0101

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