Description
S11142 Si photodiode
High sensitivity, direct detection of low energy (2 keV or more) electron beams
Features
-Direct detection of low energy (2 keV or more) electron beams with high sensitivity
-High gain: 1100 times (incident electron energy: 5 keV)
-Large photosensitive area size: 14 × 14 mm
-φ2.0 mm hole in center of photosensitive area
-4-element photodiode
-Thin ceramic package
-Uses a wiring board made of less magnetic materials
Photosensitive area： 14 x 14 mm
Number of elements：4
Package：Ceramic
Incident electron energy range (typ.)：2 to 30 keV
Electron multiplying gain (typ.)：1100
Reverse voltage (max.)：20 V
Dark current (max.)：25000 pA
Cutoff frequency (typ.)：7 MHz
Terminal capacitance (typ.) ：250 pF
Measurement condition：Ta=25 ℃, VR=5 V
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