Description
Hamamatsu S3590-09 Si PIN photodiode
Large photosensitive area Hamamatsu Si PIN photodiode
Features
-Sensitivity matching with BGO and CsI(TI) scintillators
-Bare chip type (unsealed)
-High quantum efficiency
-Low capacitance
-High-speed response
-High stability
-Good energy resolution
Photosensitive area：10 × 10 mm
Number of elements：1
Package：Ceramic
Reverse voltage (max.)：100 V
Spectral response range：340 to 1100 nm
Peak sensitivity wavelength (typ.)：960 nm
Photosensitivity (typ.)：0.66 A/W
Dark current (max.)：6000 pA
Cutoff frequency (typ.)：40 MHz
Terminal capacitance (typ.)：40 pF
Measurement condition：Ta=25 ℃, Typ., unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz
Spectral response：
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