Description
940nm 25W Pulsed VCSEL Diode
Features
●940nm Multimode VCSEL
●Good thermal conduction
●Oxide isolation technology
●Short rise time
●High reliability
●Easy to collimate
Applications:
● Multichannel Lidars
● Range finder sensors
● Laser curtain
● 3D detection
● Proximity sensors
● Military applications
Ⅰ.Absolute Maximum Ratings
Parameter | Rating |
Storage Temperature | -40 to 105℃ |
Case Operating Temperature | -20 to 80℃ |
Relative Humidity | 10% to 85% |
Reverse Power Supply Voltage | 5V |
Maximum Forward Pulse Current | 90A(Duty cycle 0.1% max.) |
ESD Exposure(Human Body Model) | 1000V |
Ⅱ.Electro-Optical Characteristics(Top 25℃, pulsewidth 8.8ns at 11.68 kHz)
VCSEL Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
Pulse Optical Power | If=81 A | Po | W | 20 | 25 | 30 |
Threshold Current | – | Ith | A | – | 0.1 | – |
Forward Pulse Current | – | – | A | – | 81 | – |
Emission Area | – | – | um | – | 370*371 | – |
Peak Wavelength | Po=25 W | – | nm | 930 | 940 | 950 |
Pulse Forward Voltage | If=81 A | VF | V | 36 | 37 | 38 |
Series Resistance | If=81 A | R | Ω | 0.44 | 0.46 | 0.47 |
Beam Angle | If=81 A | – | Degrees | – | 20 | – |
Wavelength Shift | If=81 A | – | nm/℃ | – | 0.07 | – |
Rise Time | – | Tr | ns | – | 2.8 | – |
Soldering Temperature | – | – | ℃ | – | – | 260(10s) |
Duty Cycle | – | – | % | – | – | 0.1 |
Substrate | Al2O3 |
Ⅲ.Environmental Specifications
Parameter | Symbol | Min. | Typ. | Max. | Units | Ref. |
Case Operating Temp | Top | -20 | 20 | 80 | ℃ | – |
Storage Temp | Tsto | -40 | 20 | 105 | ℃ | – |
Ⅳ.LIV Graph
Ⅴ.Pulse and Wavelength