Description
808nm Infrared Laser Diode Semiconductor Laser Head 300mw
First, the product description:
High luminous efficiency
Long life
High precision assembly
Active area without aluminum strain quantum well structure
Second, the application area:
Night vision
Pump
| Parameter | Symbol | Minimum value | Representative value | Maximum | unit |
| Output power | Popt | 250 | 280 | — | mW/ |
| Divergence angle | θ⊥×θ∥ | — | — | 40X10 | deg |
| Center wavelength | λ | — | 808 | — | nm |
| Working voltage | Iop | — | 1.8 | 2.1 | V |
| Working current Vop | Vop | 1.0 | 1.2 | 1.5 | mA |
| Working temperature | — | — | 25 | 40 | ℃ |
| Storage temperature | — | -40 | — | 80 | ℃ |
| Package form | T05. | ||||
The applicatioin for the laser diode is for an illuminator for the ophthalmic imaging device . The wavelength and optical power are important. The 808nm diode is used for an ICG fluorescence application. At this point, we are comparing the 780nm and 808nm as well as the 0.2 watt vs the 1.o watt emission.
