Description

785 nm Wavelength Stabilized High Temperature Resistance Laser Diode 200mW

785 nm Wavelength Stabilized High Temperature Resistance Laser Diode 200mW is based on quantum well epitaxial layer growth and a highly reliable ridge waveguide structure with external grating feedback. This singletransverse mode laser diode features high optical output power with a wavelength stabilized spectrum having single frequency. The 785nm laser diode provides a compact TO9 5.6 mm laser source for Raman spectroscopy, instrumentation and pumping applications.

specification

Specifications:
LD Reverse Voltage (Max):2 V
Output Wavelength: 785nm/±3nm
Output power: 200mW
Absolute Max Current: 200mA
Working Voltage: DC=2.2V-3V
Operating Temperature: -10°C to 70 °C
Storage Temperature:-40°C to 80 °C
Pin Code:E

High Temperature Resistance

Note*: Operating Temperature = wavelength stabilized temperature range (ΔTstabilized), between 15°C and 30°C