Description

808 nm BCT-mount Laser Diode with 10000 mW 10W Power Output

BCT-mount Laser Diode with 10000mW 10w 808nm Infrared IR Laser Diode

Features:

• Output power：10000mW ( 10W )
• Efficient quantum well structure
• Center Wavelength：808nm
• Package：BCT-mount
• Light beam shaping

Absolute Maximum Ratings(T=25℃)

Reverse Voltage: 2V

Operating Temperature: 10℃~ 30℃

Storage Temperature：10℃~ 85℃

Solder Temperature：260℃ （10 seconds max）

Electro-Optical Characteristics(T=25℃)

Optical output power: 10000 mW

Center wavelength: 808nm

Spectral width: 5nm

Threshold current: 2000mA

Operating current: 10000mA

Operating voltage: 2.0V

Slope Efficiency: 1.2 W/A

Beam divergence
(fast axis collimated）: 10×12º

Beam divergence: 40×12º

Wavelength temperature
coefficient: 0.3 nm/℃

Emitting area: 400×1 μm