2um 2000nm 2μm Diodes
800nm-2600nm 0.3mm InGaAs PIN photodiode
Description
Features:
Low noise, High reliability
800-2600nm wide wavelength range
Active diameter 0.3mm
Hermetic package TO46 Can or with receptacle or with fiber coupling
Applications:
Gas Analyzer
Environment measurement
Optical sensor, Temperature sensing
Covert IR sensing, Spectrography
Medical and Chemical analysis
Optical power meter, Space light detect equipment
Absolute maximum ratings:
Operating temperature:-40～+85℃
Storage temperature:-50～+125℃
Forward current:5mA
Reverse voltage:0.4V
Soldering temperature(time):260℃
Electrical and optical characteristics:(T=25℃)
Active diameter: 0.3mm
Spectral range:800-2600nm
Responsivity: 0.21mA/mW Re (VR=0.2V,λ=850nm )
0.45mA/mW Re (VR=0.2V,λ=1310nm )
1.3mA/mW Re(VR=0.2V,λ=2300nm)
0.23mA/mW Re(VR=0.2V,λ=2600nm)
Response time: 12ns
Dark current:40nA ID(VR=0V)
300nA ID(VR=0V)
Reverse Breakdown voltage: 2V
Junction capacitance:90 pF Cj (f=1MHz, VR=0V)
70 pF Cj (f=1MHz, VR=0.2V)
Saturated Optical Power: 4mW
Operating voltage:0-0.2VR
Shunt impedance:120KΩ
package:Hermetic package TO46 Can or with receptacle or fiber coupling
NOTICE: The above product specifications are subject to change without notice.
