808nm Red Laser Diode Near Infrared Semiconductor Laser High Power Laser Head

$19.99

Description

808nm Red Laser Diode Near Infrared Semiconductor Laser High Power Laser Head

First, the product description:
 High luminous efficiency
 Long life
 High precision assembly
 Active area without aluminum strain quantum well structure
Second, the application area:
 Night vision
 Pump

Parameter Symbol Minimum value Representative value Maximum unit
Output power Popt 250 280 mW/
Divergence angle θ⊥×θ∥ 40X10 deg
Center wavelength λ 808 nm
Working voltage Iop 1.8 2.1 V
Working current Vop Vop 1.0 1.2 1.5 mA
Working temperature 25 40
Storage temperature -40 80
Package form T05.

The applicatioin for the laser diode is for an illuminator for the ophthalmic imaging device . The wavelength and optical power are important. The 808nm diode is used for an ICG fluorescence application. At this point, we are comparing the 780nm and 808nm as well as the 0.2 watt vs the 1.o watt emission.

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